4-173 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos 13 2 4 rf out rf out rf in gnd gnd marking - c6 rf2046 general purpose amplifier ? broadband, low noise gain blocks ? if or rf buffer amplifiers ? driver stage for power amplifiers ? final pa for low power applications ? high reliability applications ? broadband test equipment the rf2046 is a general purpose, low cost rf amplifier ic. the device is manufactured on an advanced gallium arsenide heterojunction bipolar transistor (hbt) pro- cess, and has been designed for use as an easily-cas- cadable 50 gain block. applications include if and rf amplification in wireless voice and data communication products operating in frequency bands up to 3000mhz. the device is self-contained with 50 input and output impedances and requires only two external dc biasing elements to operate as specified. with a goal of enhanced reliability, the extremely small micro-x ceramic package offers significantly lower thermal resistance than similar size plastic packages. ? dc to 3000mhz operation ? internally matched input and output ? 22db small signal gain ? 3.0db noise figure ? 10mw linear output power ? single positive power supply rf2046 general purpose amplifier RF2046PCBA-41Xfully assembled evaluation board 0 rev a11 050207 notes: 1. shaded lead is pin 1. 2. darkened areas are metallization. 3. dimension applies to ceramic lid minus epoxy coating. 0.070 sq. 45 1 0.068 0.002 0.052 0.041 0.025 0.002 3 0.005 0.002 0.015 +0.002 -0.001 0.020 0.002 0.040 0.002 0.200 sq. typ. package style: micro-x ceramic 9
4-174 rf2046 rev a11 050207 absolute maximum ratings parameter rating unit input rf power +13 dbm operating ambient temperature -40 to +85 c storage temperature -60 to +150 c parameter specification unit condition min. typ. max. overall t=25 c, v d =3.5v, i cc =35ma frequency range dc to 3000 mhz gain 22.7 db freq=100mhz 22.1 db freq=1000mhz 18 21.0 db freq=2000mhz 19.2 db freq=3000mhz gain flatness 0.9 db 100mhz to 2000mhz noise figure 2.7 db freq=2000mhz input vswr <2.0:1 in a 50 system, dc to 3000mhz output vswr <1.9:1 in a 50 system, dc to 3000mhz output ip 3 +23.5 dbm freq=2000mhz100khz, p tone =-18dbm output p 1db +10.7 dbm freq=2000mhz reverse isolation 22.8 db freq=2000mhz thermal i cc =35ma, p diss =116mw (see note 1.) theta jc 275 c/w maximum measured junction temperature at dc bias con- ditions 117 c mean time to failure (mttf) 280,000 years t amb =+85c power supply with 22 bias resistor, t=+25c device operating voltage 3.0 3.5 4.0 v at pin 3 with i cc =35ma 3.6 4.3 4.6 v at evaluation board connector, i cc =35ma operating current 35 ma see note 2. notes: note 1: the rf2046 must be operated at or below 35ma in order to achieve the thermal performance stated above. operating at 35m a will ensure the best possible combination of reliability and electrical performance. note 2: because of process variations from part to part, the current resulting from a fixed bias voltage will vary. as a result , caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 35ma over all int ended operating conditions. caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-175 rf2046 rev a11 050207 application schematic pin function description interface schematic 1rf in rf input pin. this pin is not internally dc-blocked. a dc-blocking capacitor, suitable for the frequency of operation, should be used in most applications. dc-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 2gnd ground connection. for best performance, keep traces physically short and connect immediately to ground plane. 3rf out rf output and bias pin. biasing is accomplished with an external series resistor and choke inductor to v cc . the resistor is selected to set the dc current into this pin to a desired level. the resistor value is deter- mined by the following equation: care should also be taken in the resistor selection to ensure that the current into the part never exc eeds 35ma over the planned oper- ating temperature . this means that a resistor between the supply and this pin is always required, even if a supply near 3.5v is available, to provide dc feedback to prevent thermal runaway. because dc is present on this pin, a dc-blocking capacitor, suitable for the frequency of operation, should be used in most applications. the supply side of the bias network should also be well bypassed. 4gnd same as pin 2. r v supply v device ? () i cc ------------------------------------------------------ - = rf out rf in rf ou t 22 pf r bias 10 n f 22 pf 47 nh 22 pf rf in v cc 13 2 4
4-176 rf2046 rev a11 050207 evaluation board schematic (download bill of materials from www.rfmd.com.) evaluation board layout board size 1.195" x 1.000" c2 100 pf c1 100 pf 50 strip 50 strip rf ou t j2 rf in j1 p1-1 nc p1 vcc gnd 1 2 3 l1 100 nh r1 22 vcc p1-1 c3 100 pf c4 1 f drawing 204x400- 13 2 4
4-177 rf2046 rev a11 050207 gain versus frequency across temperature i cc =35ma 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 frequency (mhz) gain (db) -40c 25c 85c output p1db versus frequency across temperature i cc =35ma 10.0 11.0 12.0 13.0 14.0 15.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 frequency (mhz) output power (dbm) -40c 25c 85c output ip3 versus frequency across temperature i cc =35ma 22.0 23.0 24.0 25.0 26.0 27.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 frequency (mhz) 3rd order intercept power (dbm) -40c 25c 85c noise figure versus frequency across temperature i cc =35ma 1.0 2.0 3.0 4.0 5.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 frequency (mhz) noise figure (db) -40c 25c 85c input vswr versus frequency across temperature i cc =35ma 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.00 1000.00 2000.00 3000.00 4000.00 5000.00 6000.00 frequency (mhz) vswr -40c 25c 85c output vswr versus frequency across temperature i cc =35ma 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.00 1000.00 2000.00 3000.00 4000.00 5000.00 6000.00 frequency (mhz) vswr -40c 25c 85c
4-178 rf2046 rev a11 050207 reverse isolation versus frequency across temperature i cc =35ma 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 frequency (mhz) reverse isolation (db) -40c 25c 85c typical current versus voltage (at evaluation board connect, r bias =22 ohms) 10.0 20.0 30.0 40.0 50.0 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 v cc (v) i cc (ma) -40c 25c 85c typical i cc versus v pin (at pin 3) 10.0 20.0 30.0 40.0 50.0 3.2 3.3 3.4 3.5 3.6 3.7 3.8 v pin (v) i cc (ma) -40c 25c 85c vcc=4.2 v power dissipated versus voltage at pin 3 (t ambient =85c) 0.00 0.05 0.10 0.15 0.20 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 v pin (v) power dissipated (w) t max versus p diss (t ambient =85c) 95.00 100.00 105.00 110.00 115.00 120.00 125.00 130.00 135.00 140.00 0.00 0.05 0.10 0.15 0.20 0.25 p diss (w) t max (c) mttf versus junction temperature (valid for i cc < 35ma) rfmd hbt2um algaas-2 (60% confidence interval) 10.0 100.0 1000.0 10000.0 100000.0 1000000.0 10000000.0 100.0 125.0 150.0 175.0 200.0 junction temperature (c) mttf (years)
4-179 rf2046 rev a11 050207 pcb design requirements pcb surface finish the pcb surface finish used for rfmd?s qualification process is electroless nickel, immersion gold. typical thickness is 3 inch to 8 inch gold over 180 inch nickel. pcb land pattern recommendation pcb land patterns are based on ipc-sm-782 standards when possible. the pad pattern shown has been developed and tested for optimized assembly at rfmd; however, it ma y require some modifications to address company specific assembly processes. the pcb land pattern has been developed to accommodate lead and package tolerances. pcb metal land mask pattern pcb solder mask pattern figure 1. pcb metal land pattern - rf204x (top view) a = 1.90 x 1.14 typ. b = 0.63 x 1.90 typ. dimensions in mm. pin 1 b b a a 1.84 typ. 3.68 typ. 1.84 typ. 3.68 typ.
4-180 rf2046 rev a11 050207 liquid photo-imageable (lpi) solder mask is recommended. the so lder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder ma sk clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requested from the pcb fabrication supplier. figure 2. pcb solder mask - rf204x (top view) 1.84 typ. pin 1 b b a a a = 2.06 x 1.30 typ. b = 0.79 x 2.06 typ. dimensions in mm. 3.68 typ. 1.84 typ. 3.68 typ.
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